Part Number Hot Search : 
PSKD72 80C19 SE094 A1601 MP2013 FDC6561 00GB1 1141CS16
Product Description
Full Text Search
 

To Download RDHA701FP10A8CK Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  radiation hardended, octal, buffered and non-buffered, solid state relays www.irf.com 1 03/29/06 description features:  total dose capability to 100krad(si)  optically coupled  buffered input stage (rdha701fp10a8qk)  input current actuated (RDHA701FP10A8CK)  1000v dc input to output isolation  hermetically sealed package the RDHA701FP10A8CK, rdha701fp10a8qk are a family of radiation hardened, octal, single-pole, normally open, buffered and non-buffered solid state relays. these devices are actuated by an input voltage or current, depending on model, and have been characterized for 100 krad(si) total dose. these parts are useful for applications requiring a compact, hermetic device. RDHA701FP10A8CK rdha701fp10a8qk octal, 100v, 1.5a 64-pin flat pack for notes, please refer to page 4 product summary part number volta g e current tr / tf buffer RDHA701FP10A8CK 100v 1.5a fast none rdha701fp10a8qk 100v 1.5a controlled 5.0v absolute maximum ratings per channel @ tj=25c (unless otherwise specified) parameter s y mbol value units output maximum voltage v s 100 v output current  i o 1.5 a input buffer voltage - rdha701fp10a8qk v in 10 v input buffer current - rdha701fp10a8qk i in 10 ma input supply voltage (optocoupler) - rdha701fp10a8qk  v dd 10 v input supply current - RDHA701FP10A8CK / rdha701fp10a8qk i dd 30 peak input supply current (t 1.0ms) - RDHA701FP10A8CK i dd pk 100 power dissipation p diss 5.5 w operating temperature range t j -55 to +125 storage temperature range t s -65 to +150 c lead temperature t l 300 ma pd-95878c
2 www.irf.com RDHA701FP10A8CK, rdha701fp10a8qk for notes, please refer to page 5 RDHA701FP10A8CK general characteristics per channel @ -55c t c +125c (unless otherwise specified) parameter group a test conditions symbol min. typ. max. units subgroups input supply current i o = 1.0a i dd -- 10 25 ma 1 1.2 -- 1.6 input voltage drop 2 i in = 10ma v l 1.4 -- 2.2 v 3 1.0 -- 1.4 input-to-output leakage current 1 v i-o = 1.0kvdc, dwell = 5.0s i i-o -- -- 1.0 a v in = 0.8v, f = 1.0mhz, v s = 25v t c = 25c thermal resistance i dd = 10ma r thjc -- -- 18 c/w mtbf (per channel) mil-hdbk-217f, sf@tc= 25c 48 -- -- mhrs output capacitance c oss -- pf 145 -- rdha701fp10a8qk general characteristics per channel @ -55c t c +125c (unless otherwise specified) parameter group a test conditions symbol min. typ. max. units subgroups input buffer threshold voltage , v in(th) 4.5 -- -- v v dd = 5.0v, i o = 1.0a -- 10 15 v dd = 10v, i o = 1.0a  -- -- 25 input-to-output leakage current 1 v i-o = 1.0kvdc, dwell = 5.0s i i-o -- -- 1.0 a v in = 0.8v, f = 1.0mhz, v s = 25v t c = 25c thermal resistance  v in = 5.0v, v dd = 5.0v  ,  r thjc -- -- 18 c/w mtbf (per channel) mil-hdbk-217f, sf@tc= 25c 24.6 -- -- mhrs input supply current  i dd ma pf 145 -- output capacitance  c oss --
www.irf.com 3 RDHA701FP10A8CK, rdha701fp10a8qk for notes, please refer to page 5 pre-irradiation electrical characteristics per channel @ -55c t c +125c (unless otherwise specified) parameter group a test conditions symbol min. typ. max. units subgroups 1 -- 0.24 0.35 2 -- 0.45 0.75 1 v in = 0.8v, v s = 100v -- -- 10 2 v in = 0.8v, v s = 80v -- -- 25 1 -- -- 1.0 2,3 -- -- 3.0 i dd = 10ma, v s = 28v, d = 2.0% rc = 41 ? /100 ? /100 f, pw = 50ms i dd = 10ma, v+ = 28v, d = 2.0% rc = 41 ? /100 ? /100 f, pw = 50ms 3.0 fall time ,  1,2,3 t f -- 11 15 1,2,3 t r -- 1.1 4.5 15 ms turn-off delay  1,2,3 t off -- 35 60 rise time ,  turn-on delay  1,2,3 t on -- input buffer current v in = 5.0v i in a output leakage current i o a output on-resistance i dd = 10ma, i o = 1.0a r ds(on) ? electrical characteristics per channel @ -55c t c +125c (unless otherwise specified) parameter group a test conditions symbol min. typ. max. units subgroups 1-- 0.24 0.35 2 -- 0.45 0.75 1 v in = 0.8v, v s = 100v -- -- 10 2 v in = 0.8v, v s = 80v -- -- 25 i dd = 10ma, v s = 28v, d = 2.0% rc = 41 ? /100 f, pw = 50ms v s = 28v, d = 2.0% rc = 41 ? /100 f, pw = 50ms i dd = 10ma, v s = 28v, d = 2.0% rc = 41 ? /100 f, pw = 50ms v s = 28v, d = 2.0% rc = 41 ? /100 f, pw = 50ms 7.2 9.5 fall time ,  1,2,3 t f -- 3.5 7.0 rise time ,  1,2,3 t r -- 0.5 2.0 turn-off delay  1,2,3 t off -- output leakage current i o a turn-on delay  1,2,3 t on -- 0.6 2.5 ms output on-resistance i dd = 10ma, i o = 1.0a r ds(on) ? rdha701fp10a8qk RDHA701FP10A8CK pre-irradiation
4 www.irf.com RDHA701FP10A8CK, rdha701fp10a8qk RDHA701FP10A8CK post total dose irradiation  ,  ,  rdha701fp10a8qk post total dose irradiation  ,  ,  for notes, please refer to page 5 electrical characteristics per channel @ 25c (unless otherwise specified) parameter group a test conditions symbol min. typ. max. units sub g roups output on-resistance 1 i dd = 10ma, i o = 1.0a r ds(on) -- 0.24 0.35 ? output leakage current 1 v in = 0.8v, v s = 100v i o -- -- 10 a i dd = 10ma, v s = 28v, d = 2.0% rc = 41 ? / 100 ? /100 ? / 100 ? /100 f, pw = 50ms rise time ,  3.5 7.0 1t r t off -- 1 turn-on delay  1 turn-off delay  ms -- 0.6 2.5 t on -- 0.5 2.0 9.5 fall time ,  t f -- 7.2 1 electrical characteristics per channel @ 25c (unless otherwise specified) parameter group a test conditions symbol min. typ. max. units sub g roups output on-resistance 1 i dd = 10ma, i o = 1.0a r ds(on) -- 0.24 0.35 ? output leakage current 1 v in = 0.8v, v s = 100v i o -- -- 10 input buffer current 1 v in = 5.0v i in -- -- 1.0 i dd = 10ma, v s = 28v, d = 2.0% rc = 41 ? / 100 ? /100 ? / 100 ? /100 f, pw = 50ms a rise time ,  35 60 1t r t off -- 1 turn-on delay  1 turn-off delay  ms -- 4.5 15 15 t on -- 1.1 3.0 fall time ,  t f -- 11 1
www.irf.com 5 RDHA701FP10A8CK, rdha701fp10a8qk fig 1: maximum drain current vs case temperature  specification is guaranteed by design  rise and fall times are controlled internally  inputs protected for v in < 1.0v and v in > 7.5v  optically coupled solid state relays (ssrs) have relatively slow turn on and turn off times. care must be taken to insure that transient currents do not cause a violation of soa. if transient conditions are present, ir recommends a complete simulation to be performed by the end user to ensure compliance with soa requirements as specified in the irhq57110 data sheet  while the ssr design meets the design requirements specified in mil-prf-38534, the end user is responsible for product derating, as applicable for the application  reference figures 2, 3 & 4 for switching test circuits and wave form  input supply voltage for rdha701fp10a8qk shall not exceed 5.25v@tc 70c  total dose irradiation with input bias. 10ma i dd applied and v ds = 0 during irradiation  total dose irradiation with output bias. 80 volts v ds applied and i dd = 0 during irradiation notes for maximum ratings, general and electrical characteristic tables 0. 00 0. 20 0. 40 0. 60 0. 80 1. 00 1. 20 1. 40 1. 60 25 50 75 100 125 150 t c , case temperature (c) i d , drain current (a) international rectifier does not currently have a dscc certified radiation hardness assurance program 
6 www.irf.com RDHA701FP10A8CK, rdha701fp10a8qk schematic notes 1. buffered input stages on rdha701fp10a8qk only 2. input current actuation (*) on RDHA701FP10A8CK only
www.irf.com 7 RDHA701FP10A8CK, rdha701fp10a8qk uf uf fig 2: switching test circuit for RDHA701FP10A8CK only fig 3: switching test circuit for rdha701fp10a8qk only    
8 www.irf.com RDHA701FP10A8CK, rdha701fp10a8qk fig 4: switching test waveform radiation performance international rectifier radiation hardened ssrs are tested to verify their hardness capability. the hardness assurance program at ir uses a cobalt-60 ( 60 co) source and heavy ion irradiation. both pre- and post- irradiation performance are tested and specified using the same drive circuitry and test conditions to provide a direct comparison.
www.irf.com 9 RDHA701FP10A8CK, rdha701fp10a8qk pin designation - rdha701fp10a8qk pin no. designation pin no. designation pin no. designation pin no. designation 1 +5v 1 17 + 5v 5 33 drain 8 49 drain 4 2 in 1 18 in 5 34 drain 8 50 drain 4 3 n/c 19 n/c 35 source 8 51 source 4 4 5v rtn 1 20 5v rtn 5 36 source 8 52 source 4 5 +5v 2 21 + 5v 6 37 drain 7 53 drain 3 6 in 2 22 in 6 38 drain 7 54 drain 3 7 n/c 23 n/c 39 source 7 55 source 3 8 5v rtn 2 24 5v rtn 6 40 source 7 56 source 3 9 + 5v 3 25 + 5v 7 41 drain 6 57 drain 2 10 in 3 26 in 7 42 drain 6 58 drain 2 11 n/c 27 n/c 43 source 6 59 source 2 12 5v rtn 3 28 5v rtn 7 44 source 6 60 source 2 13 + 5v 4 29 + 5v 8 45 drain 5 61 drain 1 14 in 4 30 in 8 46 drain 5 62 drain 1 15 n/c 31 case ground 47 source 5 63 source 1 16 5v rtn 4 32 5v rtn 8 48 source 5 64 source 1 case g round is for emi shieldin g p ur p oses onl y . it does not have to be connected for p ro p er rela y o p eration pin designation - RDHA701FP10A8CK pin no. designation pin no. designation pin no. designation pin no. designation 1 current in 1 17 current in 5 33 drain 8 49 drain 4 2 n/c 18 n/c 34 drain 8 50 drain 4 3 n/c 19 n/c 35 source 8 51 source 4 4 current out 1 20 current out 5 36 source 8 52 source 4 5 current in 2 21 current in 6 37 drain 7 53 drain 3 6 n/c 22 n/c 38 drain 7 54 drain 3 7 n/c 23 n/c 39 source 7 55 source 3 8 current out 2 24 current out 6 40 source 7 56 source 3 9 current in 3 25 current in 7 41 drain 6 57 drain 2 10 n/c 26 n/c 42 drain 6 58 drain 2 11 n/c 27 n/c 43 source 6 59 source 2 12 current out 3 28 current out 7 44 source 6 60 source 2 13 current in 4 29 current in 8 45 drain 5 61 drain 1 14 n/c 30 n/c 46 drain 5 62 drain 1 15 n/c 31 case ground 47 source 5 63 source 1 16 current out 4 32 current out 8 48 source 5 64 source 1
10 www.irf.com RDHA701FP10A8CK, rdha701fp10a8qk case outline and dimensions ? 64-pin flat pak package part numbering nomenclature rd h a 7 01 fp 10 a 8 c/q k current 01 = 1.0a device type rd = dc solid state relay radiation characterization h = rad hard generation a = current design radiation level 7 = 100k rad (si) package fp = 64-pin flat pack screening level k = class k per mil-prf-38534 features c = non buffered compromise q = 5.0 volt buffered controlled poles 8 = 8 poles volts 10 = 100 volts throw configuration a = single throw, normally open ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2006 notes 1. dimensioning and tolerancing per asme y14.5sm-1994 2. controlling dimension: inch 3. dimensions are shown in inches 4. tolerances are +/- 0.005 uos


▲Up To Search▲   

 
Price & Availability of RDHA701FP10A8CK

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X